Characterization of Terahertz Emission from High Resistivity by Suranjana Sengupta

By Suranjana Sengupta

Terahertz technological know-how and expertise is attracting nice curiosity as a result of its software in a wide range of fields made attainable via the improvement of latest and enhanced terahertz radiation resources and detectors. This publication makes a speciality of the advance and characterization of 1 such resource - specifically the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The excessive ultrafast service mobility, excessive resistivity, and subpicosecond service lifetime besides low bandgap make Ga0.69In0.31As a very good candidate for computer antenna established THz emitter that may be photoexcited via compact Yb-based multiwatt laser structures for top strength THz emission. The learn is geared toward comparing the influence of actual homes of a semi-large aperture Ga0.69In0.31As computing device antenna upon its THz iteration potency, and is influenced by way of the final word target of constructing a high-power terahertz radiation resource for time-domain terahertz spectroscopy and imaging systems.

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